PSMN5R6-100PS,127 NXP Semiconductors, PSMN5R6-100PS,127 Datasheet - Page 8

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PSMN5R6-100PS,127

Manufacturer Part Number
PSMN5R6-100PS,127
Description
MOSFET N-CH 100V 100A TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN5R6-100PS,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
141nC @ 10V
Input Capacitance (ciss) @ Vds
8061pF @ 50V
Power - Max
306W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0056 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
306000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4972-5
934064274127
NXP Semiconductors
PSMN5R6-100PS
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Input, output and reverse transfer capacitances
V
(pF)
(V)
10
GS
C
10
10
10
10
5
4
3
2
8
6
4
2
0
10
charge; typical values
as a function of drain-source voltage; typical
values
0
−1
40
V
DS
1
= 20 V
80
10
V
DS
120
= 50 V
V
Q
DS
All information provided in this document is subject to legal disclaimers.
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G
(V)
(nC)
C
C
C
iss
oss
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Rev. 03 — 2 December 2010
10
160
2
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
Fig 14. Gate charge waveform definitions
Fig 16. Input and reverse transfer capacitances as a
16000
12000
(pF)
8000
4000
C
0
function of gate-source voltage, typical values
V
0
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN5R6-100PS
I
Q
4
D
GS
Q
GS2
Q
G(tot)
Q
GD
8
© NXP B.V. 2010. All rights reserved.
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C
C
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(V)
iss
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