STQ1NK80ZR-AP STMicroelectronics, STQ1NK80ZR-AP Datasheet - Page 10

• Manufacturer Part Number: STQ1NK80ZR-AP
• Description: MOSFET N-CH 800V 0.3A TO-92
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STQ1NK80ZR-AP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 3W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Configuration: Single
• Resistance Drain-source Rds (on): 16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6197-3

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
10/15
DIM.
S1
e1
W
A
D
E
R
V
b
e
L
12.70
4.32
0.36
4.45
3.30
2.41
1.14
2.16
0.92
0.41
MIN.
TO-92 MECHANICAL DATA
mm.
TYP
5°
15.49
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
2.41
1.52
0.56
0.170
0.014
0.175
0.130
0.094
0.044
0.085
0.036
0.016
0.50
MIN.
TYP.
inch
5°
0.194
0.020
0.194
0.155
0.105
0.055
0.610
0.094
0.060
0.022
MAX.