STQ1NK80ZR-AP STMicroelectronics, STQ1NK80ZR-AP Datasheet - Page 11

• Manufacturer Part Number: STQ1NK80ZR-AP
• Description: MOSFET N-CH 800V 0.3A TO-92
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STQ1NK80ZR-AP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 3W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Configuration: Single
• Resistance Drain-source Rds (on): 16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6197-3

DIM.
B1
A1
e1
A
B
D
E
H
V
c
e
MIN.
0.60
2.90
0.24
6.30
3.30
6.70
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
SOT-223 MECHANICAL DATA
TYP.
0.70
3.00
0.26
6.50
2.30
4.60
3.50
7.00
0.02
mm
MAX.
1.80
0.80
3.10
0.32
6.70
3.70
7.30
10
o
0.024
0.114
0.009
0.248
0.130
0.264
MIN.
0.027
0.118
0.010
0.256
0.090
0.181
0.138
0.276
TYP.
inch
P008B
MAX.
0.071
0.031
0.122
0.013
0.264
0.146
0.287
10
o
11/15