STQ1NK80ZR-AP STMicroelectronics, STQ1NK80ZR-AP Datasheet - Page 13

• Manufacturer Part Number: STQ1NK80ZR-AP
• Description: MOSFET N-CH 800V 0.3A TO-92
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STQ1NK80ZR-AP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 3W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Configuration: Single
• Resistance Drain-source Rds (on): 16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6197-3

DIM.
C2
A1
A3
B2
B3
B5
B6
L1
L2
A
B
C
D
E
G
H
L
MIN.
0.64
0.45
0.48
15.9
2.2
0.9
0.7
5.2
6.4
4.4
0.8
6
9
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
L2
TO-251 (IPAK) MECHANICAL DATA
TYP.
mm
0.3
0.8
D
L1
MAX.
0.85
0.95
16.3
1.3
2.4
1.1
0.9
5.4
0.6
0.6
6.2
6.6
4.6
9.4
1.2
1
H
L
0.086
0.035
0.027
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
MIN.
0.012
0.031
TYP.
inch
0068771-E
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
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