STP5NK80Z STMicroelectronics, STP5NK80Z Datasheet - Page 10

• Manufacturer Part Number: STP5NK80Z
• Description: MOSFET N-CH 800V 4.3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 2.15A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 45.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 910pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.4 Ohms
• Forward Transconductance Gfs (max / Min): 4.25 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7527-5; STP5NK80Z

Test circuit
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Figure 16. Unclamped Inductive load test
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
circuit
resistive load
switching and diode recovery times
Test circuit
Figure 17. Unclamped Inductive waveform
Figure 19. Gate charge test circuit
STP5NK80Z - STP5NK80ZFP