STP95N4F3 STMicroelectronics, STP95N4F3 Datasheet - Page 5

• Manufacturer Part Number: STP95N4F3
• Description: MOSFET N-CH 40V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP95N4F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7536-5; STP95N4F3

STD95N4F3, STP95N4F3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
SD
RRM
I
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Source drain diode
Parameter
Parameter
Doc ID 13288 Rev 3
V
R
Figure 16
V
R
Figure 16
I
I
di/dt = 100 A/µs,
V
Figure 15
SD
SD
DD
DD
G
G
DD
=4.7 Ω, V
=4.7 Ω, V
=80 A, V
=80 A,
=20 V, I
=20 V, I
Test conditions
Test conditions
= 30 V, Tj=150 °C
D
D
GS
GS
GS
= 40 A,
= 40 A,
=0
=10 V
=10 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
15
50
40
15
2.8
45
60
Max.
Max.
320
1.5
80
-
-
Unit
Unit
nC
ns
ns
ns
ns
ns
5/14
A
A
V
A