STP80NF03L-04 STMicroelectronics, STP80NF03L-04 Datasheet
STP80NF03L-04
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STP80NF03L-04 Summary of contents
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... Application ■ Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” stripbased process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. ...
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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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STB80NF03L-04T4 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed) ...
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Electrical characteristics 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage ...
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STB80NF03L-04T4 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) ...
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Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/13 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance Doc ID 8479 Rev 4 STB80NF03L-04T4 ...
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STB80NF03L-04T4 Figure 8. Gate charge vs. gate-source voltage Figure 10. Normalized gate threshold voltage vs. temperature Figure 12. Source-drain diode forward characteristics Figure 9. Capacitance variations Figure 11. Normalized on resistance vs. temperature Figure 13. Normalized breakdown voltage vs temperature. ...
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Test circuits 3 Test circuits Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/13 Figure 15. Gate charge test circuit Figure 17. ...
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STB80NF03L-04T4 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® ...
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Package mechanical data Dim 10/13 D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 ...
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STB80NF03L-04T4 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 ...
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Revision history 6 Revision history Table 8. Document revision history Date 02-Oct-2007 20-Apr-2009 12/13 Revision 3 Initial electronic version 4 Removed packages TO-220, I²PAK. Doc ID 8479 Rev 4 STB80NF03L-04T4 Changes ...
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... STB80NF03L-04T4 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...