STP80NF03L-04 STMicroelectronics, STP80NF03L-04 Datasheet - Page 4

• Manufacturer Part Number: STP80NF03L-04
• Description: MOSFET N-CH 30V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF03L-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2676-5

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
g
(1)
=25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 8479 Rev 4
I
V
V
V
V
V
V
D
V
V
V
V
V
Figure 15
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
= 250 µA, V
= max rating
= max rating @125 °C
= V
= ±20 V
= 10 V, I
= 4.5 V, I
Test conditions
= 15 V
= 25 V, f = 1 MHz,
= 0
= 24 V, I
= 4.5 V
Test conditions
GS
, I
D
,
D
D
D
I
GS
= 250 µA
D
= 40 A
= 40 A
= 80 A,
= 15 A
= 0
Min.
Min.
30
-
-
-
1
0.0035
0.004
5500
1670
Typ.
Typ.
290
STB80NF03L-04T4
50
85
23
40
0.0055
Max.
0.004
Max.
±100
110
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
S
Ω
Ω
V
V