STP30N65M5

Manufacturer Part NumberSTP30N65M5
DescriptionMOSFET N-CH 650V 22A TO220
ManufacturerSTMicroelectronics
SeriesMDmesh™
STP30N65M5 datasheet
 

Specifications of STP30N65M5

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs139 mOhm @ 11A, 10VDrain To Source Voltage (vdss)650V
Current - Continuous Drain (id) @ 25° C22AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs64nC @ 10VInput Capacitance (ciss) @ Vds2880pF @ 100V
Power - Max140WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-10078-5  
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STB30N65M5, STF30N65M5, STI30N65M5
N-channel 650 V, 0.125 Ω, 22 A, MDmesh™ V Power MOSFET
Features
V
@
DSS
Type
R
T
JMAX
STB30N65M5
710 V
STF30N65M5
710 V
STI30N65M5
710 V
STP30N65M5
710 V
STW30N65M5
710 V
1. Limited only by maximum temperature allowed
Worldwide best R
*area
DS(on)
Higher V
rating
DSS
Excellent switching performance
Easy to drive
100% avalanche tested
High dv/dt capability
Application
Switching applications
Description
MDmesh™ V is a revolutionary Power MOSFET
technology based on an innovative proprietary
vertical process, which is combined with
STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
has extremely low on-resistance, which is
unmatched among silicon-based Power
MOSFETs, making it especially suitable for
applications which require superior power density
and outstanding efficiency.
Table 1.
Device summary
Order codes
STB30N65M5
STF30N65M5
STI30N65M5
STP30N65M5
STW30N65M5
September 2009
STP30N65M5, STW30N65M5
2
2
D
PAK, I
PAK, TO-220FP, TO-220, TO-247
max
I
DS(on)
D
< 0.139 Ω
22 A
D²PAK
< 0.139 Ω
(1)
22 A
< 0.139 Ω
22 A
< 0.139 Ω
22 A
< 0.139 Ω
22 A
Figure 1.
Marking
30N65M5
30N65M5
30N65M5
30N65M5
30N65M5
Doc ID 15331 Rev 2
3
1
3
2
1
TO-220FP
3
2
1
TO-220
TO-247
Internal schematic diagram
Package
Packaging
D²PAK
Tape and reel
TO-220FP
Tube
I²PAK
Tube
TO-220
Tube
TO-247
Tube
3
1 2
I²PAK
3
2
1
1/18
www.st.com
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STP30N65M5 Summary of contents

  • Page 1

    ... Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes STB30N65M5 STF30N65M5 STI30N65M5 STP30N65M5 STW30N65M5 September 2009 STP30N65M5, STW30N65M5 PAK, I PAK, TO-220FP, TO-220, TO-247 max I DS(on) D < 0.139 Ω D²PAK < ...

  • Page 2

    Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 3

    STB/F/I/P/W30N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT ...

  • Page 4

    Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) C Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...

  • Page 5

    STB/F/I/P/W30N65M5 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) ...

  • Page 6

    Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, I²PAK Tj=150°C Tc=25°C Sinlge pulse 0.1 0 Figure 4. Safe operating area for TO-220FP ...

  • Page 7

    STB/F/I/P/W30N65M5 Figure 8. Output characteristics I D (A) V =10V Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance V GS ...

  • Page 8

    Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 16. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.2 1.0 0.8 0.6 T ...

  • Page 9

    STB/F/I/P/W30N65M5 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times ...

  • Page 10

    Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

  • Page 11

    STB/F/I/P/W30N65M5 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 ...

  • Page 12

    Package mechanical data Dim 12/18 TO-220FP mechanical data ...

  • Page 13

    STB/F/I/P/W30N65M5 Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID ...

  • Page 14

    Package mechanical data Dim 14/18 I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 ...

  • Page 15

    STB/F/I/P/W30N65M5 Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

  • Page 16

    Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

  • Page 17

    STB/F/I/P/W30N65M5 6 Revision history Table 8. Document revision history Date 16-Jan-2009 21-Sep-2009 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. Doc ID 15331 Rev 2 Revision history Changes 17/18 ...

  • Page 18

    ... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...