STP30N65M5 STMicroelectronics, STP30N65M5 Datasheet - Page 5

• Manufacturer Part Number: STP30N65M5
• Description: MOSFET N-CH 650V 22A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP30N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 139 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2880pF @ 100V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10078-5

STB/F/I/P/W30N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15331 Rev 2
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 22 A, V
= 22 A, di/dt = 100 A/µs
= 22 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 60 V (see
= 60 V, T
= 400 V, I
Figure
Figure
Test conditions
Test conditions
21)
21)
GS
j
GS
D
= 150 °C
= 14 A,
= 0
= 10 V
Figure
21)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
336
395
32
34
50
50
10
6
7
8
Max. Unit
Max
1.5
22
88
-
Unit
nC
nC
ns
ns
ns
ns
ns
ns
5/18
A
A
V
A
A