STP30N65M5 STMicroelectronics, STP30N65M5 Datasheet - Page 7

• Manufacturer Part Number: STP30N65M5
• Description: MOSFET N-CH 650V 22A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP30N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 139 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2880pF @ 100V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10078-5

STB/F/I/P/W30N65M5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
10000
1000
V
100
(V)
(pF)
(A)
45
40
35
30
25
20
15
10
12
10
10
I
GS
C
D
0
5
6
4
2
8
0
1
0
0
0.1
V
Output characteristics
GS
10
V
=10V
5
DS
20
1
10
30
15
V
DD
40
I
10
D
=11A
=520V
20
50
25
100
60
7V
30
70
V
6V
V
5V
GS
Q
Doc ID 15331 Rev 2
DS
V
AM05471v1
g
AM05465v1
AM05469v1
DS
(nC)
(V)
320
400
80
0
480
240
160
Ciss
Crss
(V)
Coss
Figure 9.
Figure 13. Output capacitance stored energy
R
DS(on)
E
0.14
0.13
0.08
0.12
0.10
0.09
(µJ)
0.11
(A)
(Ω)
40
30
25
20
15
10
45
35
I
oss
D
12
10
0
5
2
0
8
6
4
0
0
0
Transfer characteristics
100
2
5
V
DS
200 300
=15V
10
4
Electrical characteristics
6
15
400
8
20
500 600
10
25
V
GS
I
D
AM05470v1
(V)
AM05466v1
AM05468v1
V
(A)
DS
(V)
7/18