STD27N3LH5 STMicroelectronics, STD27N3LH5 Datasheet - Page 7

• Manufacturer Part Number: STD27N3LH5
• Description: MOSFET N-CH 30V 27A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD27N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10019-2

STD27N3LH5, STP27N3LH5, STU27N3LH5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
(norm)
(norm)
BV
V
GS(th)
1.00
0.95
1.05
0.90
0.85
V
1.10
(V)
0.7
0.6
1.1
1.0
0.9
0.8
0.5
0.4
DSS
12
10
GS
6
2
8
4
0
-55
-55
0
Normalized BV
vs temperature
-30
-30
V
DD
I
-5
D
-5
=15V
=27A
2
20 45
20 45
4
70
DSS
70
95 120 145
95
vs temperature
120
6
T
Q
J
Doc ID 15617 Rev 3
(°C)
g
(nC)
AM03902v1
AM03904v1
AM03906v1
T
J
(°C)
Figure 9.
Figure 13. Normalized on resistance vs
(norm)
R
R
DS(on)
DS(on)
310
210
610
510
410
110
(pF)
810
710
(Ω)
0.6
0.4
0.8
1.8
1.6
1.4
1.2
1.0
10
C
25
35
30
20
10
15
-55
5
0
0
0
Static drain-source on resistance
Crss
temperature
-30
5
-5
V
I
D
GS
10
=13.5A
20 45
10
=10V
T J =25°C
f=1MHz
Electrical characteristics
15
70
20
95
20
120
25
T
V
J
DS
(°C)
AM03907v1
AM03903v1
AM03905v1
(V)
I
Ciss
D
Coss
(A)
7/21