TPCA8009-H(TE12L,Q Toshiba, TPCA8009-H(TE12L,Q Datasheet - Page 3

MOSFET N-CH 150V 7A 8-SOPA

TPCA8009-H(TE12L,Q

Manufacturer Part Number
TPCA8009-H(TE12L,Q
Description
MOSFET N-CH 150V 7A 8-SOPA
Manufacturer
Toshiba
Datasheet

Specifications of TPCA8009-H(TE12L,Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 10V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
8-SOPA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TPCA8009HTE12LQTR
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
C
I
C
|Y
C
Q
Q
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
t
t
iss
rss
gd
sw
th
gs
fs
r
f
g
|
V
V
I
I
I
V
V
V
V
Duty < = 1%, t
V
I
V
D
D
D
DR
I
GS
DS
DS
GS
DS
DS
DD
D
GS
= 10 mA, V
= 10 mA, V
= 10 mA, V
3
= 7 A
= 7 A, V
(Ta = 25°C)
= ±16 V, V
= 150 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 120 V, V
10 V
0 V
Test Condition
Test Condition
GS
w
D
D
D
GS
GS
GS
GS
= 10 μs
= 1 mA
= 3.5 A
DS
GS
= 3.5 A
GS
= 0 V
= 0 V
= −5 V
= −20 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
I
= 10 V,
D
V
= 3.5 A
DD
∼ − 75 V
V
OUT
Min
150
150
100
Min
2.0
2.1
Typ.
0.23
Typ.
600
220
4.5
7.6
2.4
3.7
20
17
13
70
10
TPCA8009-H
8
2007-12-18
0.35
−2.0
Max
Max
±10
100
4.0
14
Unit
Unit
nC
μA
μA
pF
ns
Ω
V
V
S
A
V

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