TPCA8009-H(TE12L,Q Toshiba, TPCA8009-H(TE12L,Q Datasheet - Page 5

• Manufacturer Part Number: TPCA8009-H(TE12L,Q
• Description: MOSFET N-CH 150V 7A 8-SOPA
• Manufacturer: Toshiba

Specifications of TPCA8009-H(TE12L,Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOPA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8009HTE12LQTR

1000
800
600
400
200
100
200
150
100
10
50
0
−80
1
0.1
0
0
Common source
Common source
Common source
V
Pulse test
V
f = 1 MHz
Ta = 25°C
GS
Ta = 25°C
Pulse test
GS
I
−40
D
Drain-source voltage V
= 10 V
= 7 A
Ambient temperature Ta (°C)
= 0 V
Total gate charge Q
Dynamic input/output
V DS
Capacitance – V
0
1
5
characteristics
R
DS (ON)
I D = 7A
40
30V
− Ta
3.5
60V
80
10
10
DS
V DD = 120V
DS
g
1.7
120
(nC)
(V)
C iss
C oss
C rss
V GS
160
100
15
16
12
8
4
0
5
100
0.1
10
1
4
3
2
1
0
0
−80
Common source
10
Ta = 25°C
Pulse test
5
Drain-source voltage V
−40
Ambient temperature Ta (°C)
−0.4
3
0
I
DR
1
V
th
− V
40
− Ta
DS
−0.8
V GS = 0 V
80
DS
TPCA8009-H
Common source
V
Pulse test
I
DS
D
(V)
= 1mA
120
= 10 V
2007-12-18
−1.2
160