TPCA8009-H(TE12L,Q Toshiba, TPCA8009-H(TE12L,Q Datasheet - Page 6

• Manufacturer Part Number: TPCA8009-H(TE12L,Q
• Description: MOSFET N-CH 150V 7A 8-SOPA
• Manufacturer: Toshiba

Specifications of TPCA8009-H(TE12L,Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOPA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8009HTE12LQTR

2.5
1.5
0.5
100
0.1
10
3
2
1
0
0
1
1
I D max(Continuous)
I D max (Pulse) *
Curves
linearly
temperature.
*Single - pulse
Tc = 25°C
(1)
(2)
Ambient temperature Ta (°C)
Drain-source voltage V
must be derated
with
DC Operation
40
Tc = 25°C
1000
100
Safe operating area
increase
0.1
10
0.001
1
10
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc=25℃
P
D
80
in
– Ta
(1) Device mounted on a
(2) Device mounted on a
t = 10s
V DSS max
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
t =1 ms *
0.01
100
DS
120
10 ms *
(V)
0.1
160
Pulse width t
1000
r
6
th
– t
1
w
w
(s)
60
40
20
0
10
0
Case temperature Tc (°C)
40
100
Single pulse
P
D
80
– Tc
(2)
(1)
(3)
1000
TPCA8009-H
120
2007-12-18
160