TPCA8009-H(TE12L,Q Toshiba, TPCA8009-H(TE12L,Q Datasheet - Page 4

• Manufacturer Part Number: TPCA8009-H(TE12L,Q
• Description: MOSFET N-CH 150V 7A 8-SOPA
• Manufacturer: Toshiba

Specifications of TPCA8009-H(TE12L,Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOPA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8009HTE12LQTR

100
20
16
12
10
0.1
10
8
4
0
8
6
4
2
0
1
0
0
0.1
Common source
Common source
Common source
V
Ta = 25°C
Pulse test
Pulse test
DS
V
Pulse test
DS
= 10 V
Drain-source voltage V
Gate-source voltage V
= 10 V
1
2
Drain current I
100
8
1
Ta = −55°C
25
2
4
100
I
I
|Y
10
D
D
fs
– V
– V
| – I
25
DS
GS
Ta = −55°C
D
3
6
D
7
10
GS
DS
(A)
V GS = 4 V
4
8
(V)
(V)
6
5.5
4.5
5
10
5
100
4
10000
1000
100
10
20
16
12
5
4
3
2
1
0
8
4
0
0.1
0
0
Common source
Common source
Ta = 25°C
Pulse test
V
Ta = 25°C
Pulse test
GS
Drain-source voltage V
1.7
Gate-source voltage V
= 10 V
4
4
Drain current I
1
10
R
8
V
3.5
8
DS (ON)
I
DS
D
– V
– V
DS
5
GS
12
– I
12
D
10
8
D
V GS = 4.5 V
GS
DS
(A)
Common source
I D = 7 A
TPCA8009-H
Ta = 25°C
Pulse test
5.5
16
16
(V)
(V)
6
6.5
7
2007-12-18
100
20
20