STP9NK80Z STMicroelectronics, STP9NK80Z Datasheet - Page 2

• Manufacturer Part Number: STP9NK80Z
• Description: MOSFET N-CH 800V 7.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP9NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5133-5

STP9NK80Z - STF9NK80Z
2/11
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
I
ESD(G-S)
V
DM
P
V
V
V
E
T
I
DGR
TOT
AR
I
I
T
T
ISO
stg
DS
GS
AS
GSO
D
D
7.5A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source
Breakdown Voltage
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Parameter
j
= 25 °C, I
DD
80% V
Parameter
Parameter
D
C
(BR)DSS
GS
= I
= 25°C
Igs=± 1mA (Open Drain)
GS
j
= 20 k )
max)
AR
= 0)
, V
Test Conditions
DD
C
C
= 25°C
= 100°C
= 50 V)
Min.
30
TO-220
1.20
TO-220
150
7.5
4.7
30
0.83
-
-55 to 150
-55 to 150
Max Value
Value
4000
± 30
800
800
62.5
4.5
350
350
Typ.
7.5
TO-220FP
TO-220FP
7.5 (*)
4.7 (*)
30 (*)
2500
0.28
35
3.6
Max.
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
°C
W
V
V
V
A
A
A
V
V
A
V