PMV213SN,215 NXP Semiconductors, PMV213SN,215 Datasheet - Page 6

• Manufacturer Part Number: PMV213SN,215
• Description: MOSFET N-CH 100V 1.9A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV213SN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057521215; PMV213SN T/R; PMV213SN T/R

Philips Semiconductors
9397 750 11128
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
j
400
300
200
100
j
(A)
I D
= 25 C
= 25 C
6
4
2
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
0.5
V GS = 5 V
2
1
5.2 V
4
10 V
1.5
V GS = 4.2 V
I D (A)
V DS (V)
6 V
5.4 V
03aj45
03aj46
5.2 V
4.8 V
4.6 V
4.4 V
5.4 V
10 V
5 V
6 V
Rev. 02 — 19 February 2003
2
6
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
j
I D
a
= 25 C and 150 C; V
=
6
4
2
0
3
2
1
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
----------------------------- -
0
R
V DS > I D x R DSon
DSon 25 C
R
DSon
0
TrenchMOS™ standard level FET
2
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
DS
25 C
60
I
D
PMV213SN
R
4
DSon
120
T j = 150 C
V GS (V)
T j ( C)
03aj47
03aa29
180
6
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