BUK7520-55A,127 NXP Semiconductors, BUK7520-55A,127 Datasheet

MOSFET N-CH 55V 54A TO220AB

BUK7520-55A,127

Manufacturer Part Number
BUK7520-55A,127
Description
MOSFET N-CH 55V 54A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7520-55A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
54A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1592pF @ 25V
Power - Max
118W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
54 A
Power Dissipation
118000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056255127
BUK7520-55A
BUK7520-55A
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive and general purpose
power switching
BUK7520-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 15 June 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
see
T
V
see
V
see
I
V
unclamped
D
j
mb
GS
GS
GS
GS
≥ 25 °C; T
= 48 A; V
Figure
Figure
Figure
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 10 V; T
1; see
12; see
12; see
sup
j
D
D
≤ 175 °C
mb
j(init)
= 25 A; T
= 25 A; T
≤ 55 V; R
= 25 °C;
Figure 2
Figure 3
= 25 °C;
Figure 13
Figure 13
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
j
j
GS
= 175 °C;
= 25 °C;
= 50 Ω;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
17
-
Max Unit
55
54
118
40
20
115
V
A
W
mΩ
mΩ
mJ

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BUK7520-55A,127 Summary of contents

Page 1

... BUK7520-55A N-channel TrenchMOS standard level FET Rev. 02 — 15 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

Page 3

... GS j(init) 03aa24 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A N-channel TrenchMOS standard level FET Min Typ - - - - - Figure -55 - ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7520-55A Product data sheet DSon δ D. All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A N-channel TrenchMOS standard level FET 03nc66 = 10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved ...

Page 5

... Transient thermal impedance from junction to solder point as a function of pulse duration BUK7520-55A Product data sheet Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A N-channel TrenchMOS standard level FET Min Typ - - - 60 03nc67 t p δ ...

Page 6

... °C j from contact screw on mounting base to centre of die ; ° ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A Min Typ Max Unit 4 500 µA - 0.05 10 µA - ...

Page 7

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A N-channel TrenchMOS standard level FET Drain-source on-state resistance as a function of drain current; typical values ( Forward transconductance as a function of drain current ...

Page 8

... (V) GS Fig 10. Gate-source voltage as a function of turn-on 03aa32 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A N-channel TrenchMOS standard level FET ( gate charge; typical values ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 120 I S (A) 100 80 = 175 ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A N-channel TrenchMOS standard level FET 2500 , C iss 2000 C oss 1500 C rss 1000 500 0 −2 − function of drain-source voltage ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3 ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7520-55A separated from data sheet BUK7520_7620_55A v.1. BUK7520_7620_55A v.1 20010118 BUK7520-55A Product data sheet N-channel TrenchMOS standard level FET ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK7520-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 June 2010 Document identifier: BUK7520-55A ...

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