BUK7520-55A,127 NXP Semiconductors, BUK7520-55A,127 Datasheet - Page 11

• Manufacturer Part Number: BUK7520-55A,127
• Description: MOSFET N-CH 55V 54A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7520-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1592pF @ 25V
• Power - Max: 118W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 54 A
• Power Dissipation: 118000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056255127; BUK7520-55A; BUK7520-55A

NXP Semiconductors
8. Revision history
Table 7.
BUK7520-55A
Product data sheet
Document ID
BUK7520-55A v.2
Modifications:
BUK7520_7620_55A v.1 20010118
Revision history
Release date
20100615
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7520-55A separated from data sheet BUK7520_7620_55A v.1.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 02 — 15 June 2010
Change notice
-
-
N-channel TrenchMOS standard level FET
BUK7520-55A
-
Supersedes
BUK7520_7620_55A v.1
© NXP B.V. 2010. All rights reserved.
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