BUK7520-55A,127 NXP Semiconductors, BUK7520-55A,127 Datasheet - Page 4

• Manufacturer Part Number: BUK7520-55A,127
• Description: MOSFET N-CH 55V 54A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7520-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1592pF @ 25V
• Power - Max: 118W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 54 A
• Power Dissipation: 118000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056255127; BUK7520-55A; BUK7520-55A

NXP Semiconductors
BUK7520-55A
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
1
P
t
p
T
R
DSon
δ =
= V
All information provided in this document is subject to legal disclaimers.
T
t
t
p
DS
/I
D
Rev. 02 — 15 June 2010
10
D.C.
N-channel TrenchMOS standard level FET
V
DS
(V)
t
100 μs
1 ms
10 ms
100 ms
p
BUK7520-55A
= 10 μs
03nc66
10
2
© NXP B.V. 2010. All rights reserved.
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