BUK9618-55A,118 NXP Semiconductors, BUK9618-55A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK9618-55A,118
• Description: MOSFET N-CH 55V 61A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9618-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 61 A
• Power Dissipation: 136000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056812118; BUK9618-55A /T3; BUK9618-55A /T3

Philips Semiconductors
9397 750 08461
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
P der
(%)
der
mb
function of mounting base temperature.
120
100
80
60
40
20
= 25 C; I
0
=
I D
(A)
0
---------------------- -
P
10 3
10 2
10
1
tot 25 C
P
25
1
tot
DM
P
50
single pulse.
t p
T
100%
75
R DSon = V DS / I D
100
=
t p
T
t
125
150
T mb ( o C)
175
03na19
200
DC
Rev. 01 — 27 August 2001
BUK9518-55A; BUK9618-55A
10
Fig 2. Continuous drain current as a function of
V
I
der
GS
I D
(A)
mounting base temperature.
80
60
40
20
0
=
4.5 V
25
-------------------
I
D 25 C
I
D
50
V DS (V)
75
100%
100
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
125
t p = 10 µs
100 µs
1 ms
10 ms
100 ms
150
175
T mb (ºC)
10 2
200
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