BUK9618-55A,118 NXP Semiconductors, BUK9618-55A,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9618-55A,118
• Description: MOSFET N-CH 55V 61A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9618-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 61 A
• Power Dissipation: 136000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056812118; BUK9618-55A /T3; BUK9618-55A /T3

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 08461
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
V
V
V
Figure 7
V
V
V
I
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of die
SOT78
from upper edge of drain
mounting base to centre of die
SOT404
from source lead to source
bond pad
D
D
D
DS
GS
GS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
= 25 A;
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 10 V; V
= 5 V; I
= 25 C
= 175 C
= 4.5 V; I
= 10 V; I
= 5 V; V
= 0 V; V
= 30 V; R
= 5 V; R
Rev. 01 — 27 August 2001
and
Figure 14
Figure 12
BUK9518-55A; BUK9618-55A
D
DS
DD
DS
G
D
8
= 25 A;
D
GS
L
= 10
= 25 A
DS
= V
= 25 A
GS
= 44 V;
= 25 V;
= 1.2 ;
= 0 V
= 0 V
= 0 V
GS
;
Figure 9
Min
55
50
1
0.5
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
1.5
0.05
2
14
12
34
4.5
14
1660
290
190
21
126
95
97
4.5
3.5
2.5
7.5
Max
2
2.3
10
500
100
18
36
19
16
2210
350
270
5 of 14
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
A
A