BUK9618-55A,118 NXP Semiconductors, BUK9618-55A,118 Datasheet - Page 4

MOSFET N-CH 55V 61A SOT404

BUK9618-55A,118

Manufacturer Part Number
BUK9618-55A,118
Description
MOSFET N-CH 55V 61A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK9618-55A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
61A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
34nC @ 5V
Input Capacitance (ciss) @ Vds
2210pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
61 A
Power Dissipation
136000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056812118
BUK9618-55A /T3
BUK9618-55A /T3
Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 08461
Product data
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-a)
th(j-mb)
Z th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
(K/W)
10 -1
10 -2
10 -3
10
1
10 -6
0.05
0.02
Single Shot
0.2
0.1
7.1 Transient thermal impedance
= 0.5
10 -5
10 -4
Rev. 01 — 27 August 2001
BUK9518-55A; BUK9618-55A
Conditions
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Figure 4
10 -3
10 -2
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10 -1
P
t p
T
t p (s)
=
Value
60
50
1.1
t p
T
t
1
Unit
K/W
K/W
K/W
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