BUK7526-100B,127 NXP Semiconductors, BUK7526-100B,127 Datasheet

MOSFET N-CH 100V 49A TO220AB

BUK7526-100B,127

Manufacturer Part Number
BUK7526-100B,127
Description
MOSFET N-CH 100V 49A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7526-100B127.pdf (15 pages)

Specifications of BUK7526-100B,127

Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
157W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
38nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
49A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.026 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
49 A
Power Dissipation
157000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057747127::BUK7526-100B::BUK7526-100B
1. Product profile
2. Pinning information
Table 1:
[1]
Pin
1
2
3
mb
It is not possible to make connection to pin 2 of the SOT404 package.
Description
gate (g)
drain (d)
source (s)
mounting base,
connected to
drain (d)
Pinning - SOT78 and SOT404 simplified outlines and symbol
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
[1]
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability:
BUK7526-100B in SOT78 (TO-220AB)
BUK7626-100B in SOT404 (D
BUK75/7626-100B
TrenchMOS™ standard level FET
Rev. 01 — 11 April 2003
Very low on-state resistance
175 C rated
Automotive systems
Motors, lamps and solenoids
E
I
D
Simplified outline
DS(AL)S
SOT78 (TO-220AB)
49 A
1 2
mb
3
144 mJ
MBK106
SOT404 (D
1
2
-PAK).
mb
2
2
3
-PAK)
MBK116
Q101 compliant
Standard level compatible.
12 V, 24 V and 42 V loads
General purpose power switching.
R
P
tot
DSon
157 W.
= 22 m (typ)
Symbol
MBB076
g
Product data
d
s

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BUK7526-100B,127 Summary of contents

Page 1

... Rev. 01 — 11 April 2003 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D 1.2 Features Very low on-state resistance 175 C rated 1.3 Applications ...

Page 2

Philips Semiconductors 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC drain-gate voltage (DC) DGR V gate-source voltage (DC drain current (DC) ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature ...

Page 4

Philips Semiconductors 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base R thermal resistance from junction to ambient th(j-a) SOT78 (TO-220AB) 2 SOT404 (D -PAK) 4.1 Transient thermal impedance 1 = ...

Page 5

Philips Semiconductors 5. Characteristics Table 4: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors Table 4: Characteristics …continued unless otherwise specified. j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 9397 750 11238 Product data Conditions Min ...

Page 7

Philips Semiconductors 150 Label ( (A) 20 100 7 6 5 300 Fig 5. Output characteristics: ...

Page 8

Philips Semiconductors 5 V GS(th) (V) 4 max 3 typ min - mA Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 9

Philips Semiconductors 100 175 Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 10

Philips Semiconductors 6. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...

Page 11

Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...

Page 12

Philips Semiconductors 7. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. 9397 750 11238 Product data 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 solder lands ...

Page 13

Philips Semiconductors 8. Revision history Table 5: Revision history Rev Date CPCN Description 01 20030411 - Product data (9397 750 11238) 9397 750 11238 Product data BUK75/7626-100B TrenchMOS™ standard level FET Rev. 01 — 11 April 2003 © Koninklijke Philips ...

Page 14

Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 15

Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...

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