BUK7526-100B,127 NXP Semiconductors, BUK7526-100B,127 Datasheet - Page 3

• Manufacturer Part Number: BUK7526-100B,127
• Description: MOSFET N-CH 100V 49A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7526-100B,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 157W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 49A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 157000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057747127::BUK7526-100B::BUK7526-100B

Philips Semiconductors
9397 750 11238
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
(%)
I D
(A)
P
T
10 3
10 2
120
der
mb
10
80
40
0
1
function of mounting base temperature.
= 25 C; I
0
1
=
---------------------- -
P
tot 25 C
P
tot
DM
Limit R DSon = V DS /I D
50
single pulse.
100%
100
150
T mb
10
03na19
DC
C)
200
Rev. 01 — 11 April 2003
Fig 2. Continuous drain current as a function of
I D
(A)
V
60
40
20
GS
0
mounting base temperature.
0
10 V
10 2
BUK75/7626-100B
50
t p = 10 s
100 s
1 ms
10 ms
100 ms
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
100
V DS (V)
150
T mb ( C)
03nm45
03nm43
10 3
200
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