BUK7526-100B,127 NXP Semiconductors, BUK7526-100B,127 Datasheet - Page 7

• Manufacturer Part Number: BUK7526-100B,127
• Description: MOSFET N-CH 100V 49A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7526-100B,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 157W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 49A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 157000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057747127::BUK7526-100B::BUK7526-100B

Philips Semiconductors
9397 750 11238
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
T
I D
(m )
(A)
150
100
j
j
= 25 C; t
60
50
40
30
20
10
= 25 C
50
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
Label is V GS (V)
p
= 300 s
5.5
2
25
20
4
6
50
5.5
4.5
6.5
6
5
10
6.5
7
9
6
7
Label is V GS (V)
8
10
75
8
8
I D (A)
V DS (V)
03nm41
03nm40
7.5
20
100
10
Rev. 01 — 11 April 2003
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R DSon
T
a
(m )
a
j
2.5
1.5
0.5
= 25 C; I
50
43
36
29
22
15
=
2
1
0
of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
5
DSon 25 C
R
DSon
D
= 25 A
BUK75/7626-100B
0
TrenchMOS™ standard level FET
10
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
60
15
120
V GS (V)
T j ( C)
03nm39
03ng41
180
20
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