BUK7635-100A,118 NXP Semiconductors, BUK7635-100A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7635-100A,118
• Description: MOSFET N-CH 100V 41A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7635-100A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2535pF @ 25V
• Power - Max: 149W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 41 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055655118; BUK7635-100A /T3; BUK7635-100A /T3

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07829
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
W
D
D
DM
DR
DRM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
DSS
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
Quick reference data
Limiting values
Rev. 01 — 02 February 2001
BUK7535-100A; BUK7635-100A
Conditions
T
T
V
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
mb
mb
mb
mb
mb
mb
mb
mb
GS
DS
T
T
GS
j
j
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 25 C
= 175 C
= 20 k
100 V; V
and
mb
= 25 C
D
3
Figure 1
GS
GS
= 25 A
GS
GS
= 10 V
= 10 V;
= 10 V; R
= 10 V;
p
p
10 s
10 s;
Figure 2
D
GS
= 25 A;
= 50 ;
TrenchMOS™ standard level FET
Typ
21
Min
55
55
© Philips Electronics N.V. 2001. All rights reserved.
Max
100
41
149
175
35
88
Max
100
100
41
29
165
149
+175
+175
41
165
110
20
Unit
V
A
W
m
m
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C
C
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