BUK7635-100A,118 NXP Semiconductors, BUK7635-100A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK7635-100A,118
• Description: MOSFET N-CH 100V 41A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7635-100A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2535pF @ 25V
• Power - Max: 149W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 41 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055655118; BUK7635-100A /T3; BUK7635-100A /T3

Table 5:
T
Philips Semiconductors
9397 750 07829
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
I D
R DSon
Characteristics
(A)
140
120
100
80
60
40
20
(m )
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
80
60
40
20
0
0
0
p
= 300 s
5.5
2
6
50
…continued
4
6.5
V GS (V) =
V GS (V) =
7
6
100
10
8
8
I D (A)
V DS (V)
Conditions
I
Figure 15
I
V
S
S
GS
20
10
= 25 A; V
= 20 A; dI
10
= 10 V; V
150
5.5
9
8
7.5
6.5
4.5
Rev. 01 — 02 February 2001
BUK7535-100A; BUK7635-100A
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
R DSon
a
--------------------------- -
R
(m )
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
35
30
25
20
R
3
2
1
0
-60
DSon
5
D
Min
= 25 A
-20
TrenchMOS™ standard level FET
20
10
Typ
0.85
67
220
60
© Philips Electronics N.V. 2001. All rights reserved.
100
15
V GS (V)
Max
1.2
140
T
j
(
o
03aa29
C)
180
20
Unit
V
ns
nC
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