BUK7635-100A,118 NXP Semiconductors, BUK7635-100A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7635-100A,118
• Description: MOSFET N-CH 100V 41A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7635-100A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2535pF @ 25V
• Power - Max: 149W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 41 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055655118; BUK7635-100A /T3; BUK7635-100A /T3

Philips Semiconductors
9397 750 07829
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
function of mounting base temperature.
P der
= 25 C; I
(%)
=
----------------------
P
120
100
tot 25 C
80
60
40
20
P
0
tot
0
DM
25
single pulse.
100%
50
I D
(A)
10 3
10 2
10
75
1
1
P
100
R DSon = V DS / I D
t p
125
T
150
T mb ( o C)
=
t p
T
t
175
03na19
Rev. 01 — 02 February 2001
200
BUK7535-100A; BUK7635-100A
D.C.
10
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of mounting base temperature.
I der
=
(%)
4.5 V
------------------ -
I
10 2
D 25 C
120
100
80
60
40
20
I
t p = 10 us
100 us
1 ms
10 ms
100 ms
0
D
0
25
100%
V DS (V)
TrenchMOS™ standard level FET
50
75
100
© Philips Electronics N.V. 2001. All rights reserved.
10 3
125
150
T mb ( o C)
175
03aa24
200
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