BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet

BUK9608-55A,118

Manufacturer Part Number

BUK9608-55A,118

Description

MOSFET N-CH 55V 75A SOT404

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheets

1.BUK9608-55A118.pdf (14 pages)

2.BUK9608-55A118.pdf (14 pages)

Specifications of BUK9608-55A,118

Package / Case

D²Pak, TO-263 (2 leads + tab)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7.5 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

92nC @ 5V

Input Capacitance (ciss) @ Vds

6021pF @ 25V

Power - Max

253W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0075 Ohm @ 10 V

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 10 V

Continuous Drain Current

125 A

Power Dissipation

253000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

934055645118
BUK9608-55A /T3
BUK9608-55A /T3

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1. Description

2. Features

3. Applications

4. Pinning information

Table 1:

[1]

It is not possible to make connection to pin 2 of the SOT404 package.

Description

gate (g)

drain (d)

source (s)

mounting base;

connected to drain (d)

Pinning - SOT78 and SOT404, simpliﬁed outline and symbol

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™ technology, featuring very low on-state resistance.

Product availability:

BUK9508-55A in SOT78 (TO-220AB)

BUK9608-55A in SOT404 (D

[1]

BUK95/9608-55A

TrenchMOS™ logic level FET

Rev. 03 — 6 May 2002

TrenchMOS™ technology

Q101 compliant

175 C rated

Logic level compatible.

Automotive and general purpose power switching:

12 V and 24 V loads

Motors, lamps and solenoids.

Simpliﬁed outline

SOT78 (TO-220AB)

1 2

MBK106

-PAK).

SOT404 (D

-PAK)

MBK116

Symbol

MBB076

Product data

Related parts for BUK9608-55A,118

BUK9608-55A,118 Summary of contents

Page 1

... Rev. 03 — 6 May 2002 1. Description N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Logic level compatible. ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base R thermal resistance from junction to ambient th(j-a) SOT78 SOT404 7.1 Transient thermal impedance 1 Z th(j-mb) = 0.5 (K/W) ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise speciﬁed. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors Table 5: Characteristics …continued unless otherwise speciﬁed. j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 400 ...

Page 7

Philips Semiconductors 2.5 V GS(th) (V) 2 max 1.5 typ min 1 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. 120 g ...

Page 8

Philips Semiconductors 100 175 º Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 9

Philips Semiconductors 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...

Page 10

Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...

Page 11

Philips Semiconductors 10. Soldering handbook, full pagewidth 2.25 8.35 8.15 4.60 4.85 7.95 solder lands solder resist occupied area solder paste Dimensions in mm. Fig 18. Reﬂow soldering footprint for SOT404. 9397 750 09573 Product data 10.85 10.60 10.50 1.50 ...

Page 12

Philips Semiconductors 11. Revision history Table 6: Revision history Rev Date CPCN Description 03 20020506 - Product data (9397 750 09573); supersedes Product data of BUK9508_9608-55A_2 September 2000. Modiﬁcations: • The format of this speciﬁcation has been ...

Page 13

Philips Semiconductors Philips Semiconductors 12. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualiﬁcation Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] ...

Page 14

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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