BUK9608-55B NXP Semiconductors, BUK9608-55B Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9608-55B

Manufacturer Part Number
BUK9608-55B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK9608-55B
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BUK9608-55B
Manufacturer:
NXP
Quantity:
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive systems
BUK9608-55B
N-channel TrenchMOS logic level FET
Rev. 04 — 4 May 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
V
T
see
j
mb
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 5 V; T
= 10 V; I
= 5 V; I
1; see
D
mb
j
D
≤ 175 °C
= 25 A;
= 25 A;
= 25 °C;
Figure
Figure 2
Figure 3
11;
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
6.2
7.1
Max Unit
55
75
203
7
8.4
V
A
W
mΩ
mΩ

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BUK9608-55B Summary of contents

Page 1

... BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 — 4 May 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Min ≤ sup = 5 V; ...

Page 3

... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Min Typ Max - - - [ [2] 1 ...

Page 4

... T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03nn55 = 10 μ ...

Page 5

... Transient thermal impedance from junction to ambient as a function of pulse duration BUK9608-55B Product data sheet Conditions see Figure 4 minimum footprint; mounted on a PCB −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Min Typ - - - 50 03nn56 t p δ ...

Page 6

... °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Min Typ Max 1.1 1 ...

Page 7

... V (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Min - - = 25 ° DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03nn53 Label 150 200 250 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET 2.5 GS(th) (V) 2.0 max 1.5 typ min 1.0 0.5 0 − ...

Page 9

... 175 ° 0.0 0.5 All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET 6000 C iss C (pF) 4000 C oss 2000 C rss 0 −2 − function of drain-source voltage; typical ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. SOT404 ...

Page 11

... Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Supersedes BUK9608-55B_3 BUK95_96_9E08_55B-02 © NXP B.V. 2010. All rights reserved ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 May 2010 Document identifier: BUK9608-55B ...

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