BUK9608-55B NXP Semiconductors, BUK9608-55B Datasheet - Page 8

• Manufacturer Part Number: BUK9608-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9608-55B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(m Ω )
DSon
(A)
I
100
D
75
50
25
30
20
10
0
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
3 3.2
50
1
3.4
T
100
3.6
j
= 175 ° C
3.8
2
4
150
Label is V
T
j
10
5
= 25 ° C
3
200
All information provided in this document is subject to legal disclaimers.
V
GS
GS
I
D
03nn53
03nn50
(V)
(A)
(V)
250
4
Rev. 04 — 4 May 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
2.0
1.5
1.0
0.5
1.5
0.5
a
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9608-55B
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
T
T
j
j
03ne89
(°C)
( ° C)
03ng52
180
180
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