BUK7909-75ATE,127 NXP Semiconductors, BUK7909-75ATE,127 Datasheet - Page 11

• Manufacturer Part Number: BUK7909-75ATE,127
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7909-75ATE,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 121nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 272W
• Mounting Type: Through Hole
• Package / Case: TO-220-5 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057280127; BUK7909-75ATE; BUK7909-75ATE

NXP Semiconductors
BUK7909-75ATE_2
Product data sheet
Fig 17. Reverse diode current as a function of reverse diode voltage; typical values
100
(A)
75
50
25
I S
0
0.0
Rev. 02 — 16 February 2009
0.4
175 °C
0.8
T j = 25 °C
1.2
N-channel TrenchPLUS standard level FET
V SD (V)
03ni85
1.6
BUK7909-75ATE
© NXP B.V. 2009. All rights reserved.
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