BUK7909-75ATE,127 NXP Semiconductors, BUK7909-75ATE,127 Datasheet - Page 13

• Manufacturer Part Number: BUK7909-75ATE,127
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7909-75ATE,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 121nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 272W
• Mounting Type: Through Hole
• Package / Case: TO-220-5 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057280127; BUK7909-75ATE; BUK7909-75ATE

NXP Semiconductors
8. Revision history
Table 7.
BUK7909-75ATE_2
Product data sheet
Document ID
BUK7909-75ATE_2
Modifications:
BUK71_7909_75ATE-01
(9397 750 09878)
Revision history
Release date
20090216
20020812
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7909-75ATE separated from data sheet BUK71_7909_75ATE-01.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 16 February 2009
Change notice
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-
N-channel TrenchPLUS standard level FET
BUK7909-75ATE
Supersedes
BUK71_7909_75ATE-01
-
© NXP B.V. 2009. All rights reserved.
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