IRF7807VPBF International Rectifier, IRF7807VPBF Datasheet

MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807VPBF

Manufacturer Part Number
IRF7807VPBF
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRF7807VPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.025Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
8.3A
Power Dissipation
2.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7807VPBF
Manufacturer:
IR
Quantity:
20 000
• N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
(V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
100% R
Lead-Free
GS
≥ 4.5V)
G
Tested
Parameter
Parameter
ÃÃÃÃÃÃÃ
h
h
T
T
T
T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Symbol
T
Symbol
J
R
R
V
, T
V
I
P
I
I
DM
I
SM
θJA
DS
GS
D
θJL
S
D
STG
SO-8
DEVICE CHARACTERISTICS…
IRF7807VPbF
Typ
HEXFET
–––
–––
R
Q
Q
DS(on)
Q
OSS
SW
IRF7807V
-55 to 150
G
±20
8.3
6.6
2.5
1.6
2.5
30
66
66
®
G
S
S
S
IRF7807V
Power MOSFET
Max
50
20
17 mΩ
9.5 nC
3.4 nC
12 nC
1
2
3
4
T o p V ie w
PD-95210
Units
Units
°C/W
8
7
6
5
°C
W
V
A
A
D
D
D
D
A
11/3/04

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IRF7807VPBF Summary of contents

Page 1

... Pulsed Drain Current ÃÃÃÃÃÃÃ Power Dissipation Junction & Storage Temperature Range Continuous Source Current (Body Diode) ™ Pulsed Source Current Thermal Resistance Parameter h Maximum Junction-to-Ambient h Maximum Junction-to-Lead IRF7807VPbF SO-8 DEVICE CHARACTERISTICS… Symbol 25° 70° ...

Page 2

... IRF7807VPbF Electrical Characteristics Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current* Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Switch Charge ( gs2 gd Output Charge* Gate Resistance Turn-On Delay Time Rise Time ...

Page 3

... P P loss conduction ( = I P loss rms ( + Q gs2 ⎛ Q ⎜ + ⎝ , can be seen from *dissipated primarily in Q1 critical fac- gs2 is formed by the when multiplied by IRF7807VPbF 4 Drain Current 1 Gate Voltage Drain Voltage + drive output ) 2 × R ds(on) ) × V × ⎞ ( × V × × V × ...

Page 4

... IRF7807VPbF For the synchronous MOSFET Q2, R portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the con- trol IC so the gate drive losses become much more significant ...

Page 5

... Fig 7. On-Resistance Vs. Gate Voltage www.irf.com 4. 100 120 140 160 0 ° Fig 6. Typical Gate Charge Vs. 100 10 1 0.1 0.2 12.0 14.0 16.0 Fig 8. Typical Source-Drain Diode IRF7807VPbF 7. 16V Total Gate Charge (nC) G Gate-to-Source Voltage T = 150 C ° J ° 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) ...

Page 6

... IRF7807VPbF 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 Notes: 1. Duty factor Peak 0.001 0.01 0 Rectangular Pulse Duration (sec thJA www.irf.com ...

Page 7

... 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL LAST DIGIT YEAR WW = WEEK XXXX SEMBLY CODE F 7101 LOT CODE PART NUMBER IRF7807VPbF INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 ...

Page 8

... IRF7807VPbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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