STP11NK40ZFP STMicroelectronics, STP11NK40ZFP Datasheet

MOSFET N-CH 400V 9A TO-220FP

STP11NK40ZFP

Manufacturer Part Number
STP11NK40ZFP
Description
MOSFET N-CH 400V 9A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP11NK40ZFP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
930pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
550mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.55 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP11NK40ZFP
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP11NK40ZFP
Manufacturer:
ST
0
Part Number:
STP11NK40ZFP
Manufacturer:
ST
Quantity:
310
Features
Applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Table 1.
April 2009
STP11NK40ZFP
STB11NK40Z
STP11NK40Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Switching application
Type
STP11NK40ZFP
STB11NK40ZT4
STP11NK40Z
Order code
Device summary
N-channel 400 V, 0.49 Ω , 9 A, TO-220, TO-220FP, D
V
400V
400V
400V
DSS
R
<0.55Ω
<0.55Ω
<0.55Ω
DS(on)
Zener-protected SuperMESH
P11NK40ZFP
10A
10A
10A
B11NK40Z
P11NK40Z
I
D
Marking
STB11NK40Z, STP11NK40ZFP
110W
110W
Doc ID 8936 Rev 7
30W
Pw
Figure 1.
TO-220
TO-220FP
Package
TO-220
D²PAK
1
Internal schematic diagram
2
3
TM
D
2
STP11NK40Z
PAK
Power MOSFET
1
3
Tape and reel
Packaging
Tube
Tube
TO-220FP
www.st.com
2
PAK
1
2
1/17
3
17

Related parts for STP11NK40ZFP

STP11NK40ZFP Summary of contents

Page 1

... PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Table 1. Device summary Order code STB11NK40ZT4 STP11NK40Z STP11NK40ZFP April 2009 STB11NK40Z, STP11NK40ZFP 10A 110W 10A 110W 10A 30W TO-220 Figure 1 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 STB11NK40Z, STP11NK40ZFP, STP11NK40Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Doc ID 8936 Rev ...

Page 3

... STB11NK40Z, STP11NK40ZFP, STP11NK40Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor Gate source ESD (HBM-C= 100pF, V ESD(G-S) R= 1.5kΩ) ...

Page 4

... Electrical ratings Table 4. Avalanche characteristics Symbol Avalanche current, repetitive or not repetitive (pulse width limited by T Single pulse avalanche energy E AS (starting T 4/17 STB11NK40Z, STP11NK40ZFP, STP11NK40Z Parameter max) j =25°C, Id=Iar, Vdd=50V) j Doc ID 8936 Rev 7 Value Unit 9 A 190 mJ ...

Page 5

... STB11NK40Z, STP11NK40ZFP, STP11NK40Z 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( Gate threshold voltage GS(th) Static drain-source on R DS(on) resistance Table 6. Dynamic ...

Page 6

... In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 6/17 STB11NK40Z, STP11NK40ZFP, STP11NK40Z Parameter Test conditions V =200 V, I ...

Page 7

... STB11NK40Z, STP11NK40ZFP, STP11NK40Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 D²PAK Figure 4. Safe operating area for TO-220FP Figure 6. Output characteristics Figure 3. Thermal impedance for TO-220 D²PAK Figure 5. Thermal impedance for TO-220FP Figure 7. Transfer characteristics Doc ID 8936 Rev 7 Electrical characteristics ...

Page 8

... Electrical characteristics Figure 8. Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature 8/17 STB11NK40Z, STP11NK40ZFP, STP11NK40Z Figure 9. Static drain-source on resistance Figure 13. Normalized on resistance vs temperature Doc ID 8936 Rev 7 ...

Page 9

... STB11NK40Z, STP11NK40ZFP, STP11NK40Z Figure 14. Source-drain diode forward characteristics Figure 16. Maximum avalanche energy vs temperature Figure 15. Normalized B Doc ID 8936 Rev 7 Electrical characteristics vs temperature VDSS 9/17 ...

Page 10

... Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load switching and diode recovery times Figure 21. Unclamped inductive waveform 10/17 STB11NK40Z, STP11NK40ZFP, STP11NK40Z Figure 18. Gate charge test circuit Figure 20. Unclamped inductive load test circuit Figure 22. Switching time waveform Doc ID 8936 Rev 7 ...

Page 11

... STB11NK40Z, STP11NK40ZFP, STP11NK40Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 8936 Rev 7 Package mechanical data ® ...

Page 12

... Package mechanical data Dim 12/17 STB11NK40Z, STP11NK40ZFP, STP11NK40Z D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 7.50 10 10.40 8.50 2.54 4.88 5.28 15 15.85 2.49 2.69 2.29 2.79 1.27 1 ...

Page 13

... STB11NK40Z, STP11NK40ZFP, STP11NK40Z Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2 ...

Page 14

... Package mechanical data Dim 14/17 STB11NK40Z, STP11NK40ZFP, STP11NK40Z TO-220FP mechanical data Dia Doc ID 8936 Rev 7012510_Rev_J G ...

Page 15

... STB11NK40Z, STP11NK40ZFP, STP11NK40Z 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 0. sales type TAPE AND REEL SHIPMENT inch MIN. MAX. 10.7 0.413 0.421 15.9 0.618 0.626 1 ...

Page 16

... Revision history 6 Revision history Table 10. Document revision history Date 23-Aug-2005 28-Oct-2005 26-Jul-2006 22-Nov-2006 18-Jan-2007 20-Apr-2009 16/17 STB11NK40Z, STP11NK40ZFP, STP11NK40Z Revision 2 Preliminary version 3 Complete version 4 New template, no content change Table 5.: On/off states 5 Corrected unit on 6 Typo mistakes on page 1 7 Updated mechanical data ...

Page 17

... STB11NK40Z, STP11NK40ZFP, STP11NK40Z Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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