STP11NK40ZFP STMicroelectronics, STP11NK40ZFP Datasheet - Page 6

• Manufacturer Part Number: STP11NK40ZFP
• Description: MOSFET N-CH 400V 9A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP11NK40ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
6/17
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5 %
Table 9.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
BV
I
t
V
SDM
t
t
r(Voff)
I
d(on)
d(off)
RRM
I
SD
Q
t
t
SD
t
t
t
GSO
c
r
f
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Gate-source breakdown voltage Igs=±1mA (open drain)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Switching times
Gate-source zener diode
Parameter
Parameter
Parameter
Doc ID 8936 Rev 7
V
R
(see Figure 20)
V
R
(see Figure 20)
V
R
(see Figure 20)
I
I
di/dt = 100A/µs,
V
DD
DD
DD
SD
SD
G
G
G
DD
STB11NK40Z, STP11NK40ZFP, STP11NK40Z
=4.7Ω, V
=4.7Ω, V
=4.7Ω, V
Test conditions
=200 V, I
=200V, I
=320V, I
=9A, V
=9A,
Test conditions
Test conditions
=45V, Tj=150°C
GS
GS
D
GS
D
GS
D
=0
=4.5A,
=9A,
=4.5A,
=10V
=10V
=10V
Min.
Min.
Min.
30
-
-
-
-
-
-
-
Typ.
Typ.
225
Typ.
1.6
14
20
20
40
18
15
17
30
-
Max
Max.
Max.
1.6
36
9
-
-
-
-
Unit
Unit
Unit
µC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
V