STP11NK40ZFP STMicroelectronics, STP11NK40ZFP Datasheet - Page 3

MOSFET N-CH 400V 9A TO-220FP

STP11NK40ZFP

Manufacturer Part Number
STP11NK40ZFP
Description
MOSFET N-CH 400V 9A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP11NK40ZFP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
930pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
550mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.55 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP11NK40ZFP
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP11NK40ZFP
Manufacturer:
ST
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Part Number:
STP11NK40ZFP
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Quantity:
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STB11NK40Z, STP11NK40ZFP, STP11NK40Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
V
Symbol
Symbol
R
dv/dt
ESD(G-S)
I
V
SD
R
P
thj-case
V
DM
V
V
T
DGR
T
I
I
TOT
thj-a
T
ISO
GS
DS
stg
D
D
≤ 9A, di/dt ≤ 200 A/µs, V
J
l
(2)
(3)
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C= 100pF,
R= 1.5kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
DD
Parameter
Parameter
≤ V
(BR)DSS
Doc ID 8936 Rev 7
C
GS
= 25°C
GS
= 20KΩ)
, T
= 0)
j
≤ T
JMAX
C
C
=100°C
= 25°C
.
TO-220/D²PAK
TO-220/D²PAK
5.67
0.88
110
1.14
36
--
9
-55 to 150
Value
Value
3500
62.5
± 30
400
400
300
4.5
Electrical ratings
TO-220FP
TO-220FP
5.67
2500
36
0.24
9
4.2
30
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
Unit
V/ns
°C
°C
W
V
V
V
A
A
A
V
V
3/17

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