STF32N65M5 STMicroelectronics, STF32N65M5 Datasheet - Page 3

• Manufacturer Part Number: STF32N65M5
• Description: MOSFET N-CH 650V 24A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF32N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 119 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 3320pF @ 100V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB/F/I/P/W32N65M5
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Symbol
Symbol
R
dv/dt
R
R
I
DM
P
V
thj-case
thj-amb
V
E
T
thj-pcb
I
SD
I
I
TOT
AR
T
T
ISO
GS
AS
stg
D
D
j
l
(2)
(3)
≤ 24 A, di/dt = 400 A/µs, peak V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Max current during repetitive or single pulse
avalanche (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-
case max
Thermal resistance junction-
ambient max
Thermal resistance junction-pcb
max
Maximum lead temperature for
soldering purpose
Absolute maximum ratings
Thermal data
C
=25 °C)
j
Parameter
= 25 °C, I
Parameter
C
D
Doc ID 15316 Rev 3
= 25 °C
= I
AR
DS
, V
< V
C
C
DD
(BR)DSS
= 25 °C
= 100 °C
= 50 V)
D²PAK I²PAK TO-220 TO-247 TO-220FP
JMAX
30
)
TO-220, D²PAK
TO-247, I²PAK
62.5
0.83
150
24
15
96
Value
300
- 55 to 150
Value
± 25
650
150
15
50
8
TO-220FP
Electrical ratings
15
96
2500
24
35
62.5
(1)
3.6
(1)
(1)
°C/W
°C/W
°C/W
Unit
Unit
V/ns
°C
mJ
°C
°C
W
V
A
A
A
A
V
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