STF32N65M5 STMicroelectronics, STF32N65M5 Datasheet - Page 7

• Manufacturer Part Number: STF32N65M5
• Description: MOSFET N-CH 650V 24A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF32N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 119 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 3320pF @ 100V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB/F/I/P/W32N65M5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
10000
1000
V
100
(V)
(pF)
(A)
40
30
20
10
12
50
10
10
I
GS
C
D
0
6
4
2
8
0
1
0
0
0.1
V
Output characteristics
DS
5
20
1
10
V
40
V
DD
I
15
D
GS
=12A
=520V
10
=10V
20
60
25
100
80
30
V
GS
6V
5V
Q
V
Doc ID 15316 Rev 3
DS
g
V
(nC)
AM05451v1
AM05457v1
AM05455v1
(V)
DS
400
560
480
160
80
0
320
240
Ciss
Crss
Coss
(V)
Figure 9.
Figure 13. Output capacitance stored energy
R
0.111
0.011
0.031
0.091
0.071
0.051
DS(on)
E
(µJ)
(A)
(Ω)
40
30
20
10
50
I
oss
12
10
14
D
0
2
8
6
4
0
0
0
0
Transfer characteristics
100
2
5
200 300
4
10
Electrical characteristics
6
15
400
V
I
GS
D
8
20
=12A
=10V
500 600
10
25
V
GS
AM05452v1
AM05454v1
AM05456v1
I
V
D
DS
(V)
(A)
(V)
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