STF32N65M5 STMicroelectronics, STF32N65M5 Datasheet - Page 8

• Manufacturer Part Number: STF32N65M5
• Description: MOSFET N-CH 650V 24A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF32N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 119 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 3320pF @ 100V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Switching losses vs gate resistance
(norm)
V
GS(th)
1.00
0.80
0.70
1.10
0.90
(V)
V
0.6
0.4
0.2
0.8
1.2
1.0
(µJ)
400
300
200
100
SD
-50
0
E
0
0
0
vs temperature
characteristics
(1)
T
-25
J
=150°C
V
V
10
GS
I
CL
D
T
10
=15A
0
=400V
=10V
J
=-50°C
20
25
20
50
30
75
30
40
T
100
J
=25°C
Eon
40
50
T
J
Eoff
I
(°C)
SD
Doc ID 15316 Rev 3
AM05461v1
AM05459v1
AM05458v1
(A)
R
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
(norm)
(norm)
R
BV
DS(on)
1.07
1.05
1.03
0.99
0.97
0.95
1.01
0.93
DSS
1.9
1.7
1.5
1.3
0.9
0.7
0.5
2.1
1.1
-50
-50
temperature
-25
-25
0
0
25
25
VDSS
50
50
STB/F/I/P/W32N65M5
75
75
vs temperature
100
100
150
T
J
(°C)
AM05460v1
AM05453v1
T
J
(°C)