BSS126 L6906 Infineon Technologies, BSS126 L6906 Datasheet - Page 6

• Manufacturer Part Number: BSS126 L6906
• Description: MOSFET N-CH 600V 21MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS126 L6906

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 1.6V @ 8µA
• Gate Charge (qg) @ Vgs: 2.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000247304

Rev. 1.6
9 Drain-source on-state resistance
R
11 Threshold voltage bands
I
D
DS(on)
=f(V
0.001
1600
1400
1200
1000
0.01
800
600
400
200
0.1
=f(T
0
GS
-2.5
-60
); V
j
); I
N
DS
D
=3 V; T
-20
= 0.016mA; V
M
L
20
-2
j
=25 °C
%98
V
K
GS
T
j
[V]
60
[°C]
GS
J
typ
=0 V
-1.5
100
140
8 µA
180
page 6
-1
10 Typ. gate threshold voltage
V
parameter: I
12 Typ. capacitances
C =f(V
GS(th)
-1.5
-2.5
-3.5
100
0.1
10
-1
-2
-3
=f(T
DS
1
-60
); V
0
j
); V
D
GS
-20
=-3 V; f =1 MHz
DS
5
=3 V; I
20
10
D
= 8 µA
V
T
DS
j
60
15
[°C]
%98
[V]
typ
%2
100
20
140
25
BSS126
Ciss
Crss
Coss
2009-08-18
180
30