BSS126 H6906 Infineon Technologies, BSS126 H6906 Datasheet
BSS126 H6906
Specifications of BSS126 H6906
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BSS126 H6906 Summary of contents
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SIPMOS Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V indicator on reel GS(th) • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Type Package ...
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Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current Gate-source leakage current On-state drain current Drain-source on-state resistance Transconductance Threshold voltage V sorted in bands GS(th) ...
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Parameter Dynamic characteristics =f =25 ° Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to ...
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Power dissipation =f tot A 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0 [°C] [° Safe operating area =f(V ); ...
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Typ. output characteristics =f =25 ° parameter 0.04 0.04 0.03 0.03 0.02 0.02 0.01 0. [V] [ Typ. ...
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Drain-source on-state resistance =f 0.016mA DS(on 1600 1600 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 0 -60 -60 -20 ...
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Forward characteristics of reverse diode =f parameter 0.1 0.1 150 °C 150 °C 25 °C 25 °C 150 °C, 98% 150 °C, 98% 0.01 0.01 0.001 0.001 0 0 0.5 0 ...
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Package Outline: Footprint: Dimensions in mm Rev. 2.1 Rev. 2.1 Packaging: page 8 page 8 BSS126 2012-03-14 2012-03-14 ...
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Rev. 2.1 Rev. 2.1 page 9 page 9 BSS126 2012-03-14 2012-03-14 ...