BSS126 H6327 Infineon Technologies, BSS126 H6327 Datasheet

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BSS126 H6327

Manufacturer Part Number
BSS126 H6327
Description
MOSFET N-CH 600V 21MA SOT23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSS126 H6327

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
500 Ohm @ 16mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
21mA
Vgs(th) (max) @ Id
1.6V @ 8µA
Gate Charge (qg) @ Vgs
2.1nC @ 5V
Input Capacitance (ciss) @ Vds
28pF @ 25V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev. 1.6
1)
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD class
(JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSS126
BSS126
see table on next page and diagram 11
®
Package
PG-SOT-23
PG-SOT-23
Small-Signal-Transistor
GS(th)
indicator on reel
j
=25 °C, unless otherwise specified
Pb-free
Yes
Yes
Tape and Reel Information
L6327: 3000 pcs/reel
L6906: 3000 pcs/reel sorted in V
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
T
T
T
I
V
di /dt =200 A/µs,
T
T
D
page 1
A
A
A
j,max
A
DS
=0.016 A,
=25 °C
=70 °C
=25 °C
=25 °C
=20 V,
=150 °C
Product Summary
V
R
I
DSS,min
DS
DS(on),max
GS(th)
bands
-55 ... 150
55/150/56
0 (<250V)
1)
Value
0.021
0.017
0.085
0.50
±20
PG-SOT-23
6
0.007 A
700
600
Marking
SHs
SHs
BSS126
Unit
A
kV/µs
V
W
°C
V
2009-08-18

Related parts for BSS126 H6327

BSS126 H6327 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V indicator on reel GS(th) • Pb-free lead plating; RoHS compliant Type Package Pb-free BSS126 PG-SOT-23 Yes BSS126 PG-SOT-23 Yes Maximum ratings ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current Gate-source leakage current On-state drain current Drain-source on-state resistance Transconductance Threshold voltage V sorted in bands GS(th) ...

Page 3

Parameter Dynamic characteristics I =f =25 ° Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to ...

Page 4

Power dissipation P =f(T ) tot A 0.6 0.5 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter 0.04 0.03 0.02 0. Typ. transfer characteristics I =f =25 ° ...

Page 6

Drain-source on-state resistance R =f 0.016mA; V DS(on 1600 1400 1200 1000 %98 800 600 400 200 0 -60 - Threshold voltage bands I =f =25 ...

Page 7

Forward characteristics of reverse diode I =f parameter 0.1 150 °C 150 °C, 98% 0.01 0.001 0 0 Drain-source breakdown voltage I =f =25 °C D ...

Page 8

Package Outline: Footprint: Dimensions in mm Rev. 1.6 Packaging: page 8 BSS126 2009-08-18 ...

Page 9

... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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