BSS126 H6327 Infineon Technologies, BSS126 H6327 Datasheet - Page 4

• Manufacturer Part Number: BSS126 H6327
• Description: MOSFET N-CH 600V 21MA SOT23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS126 H6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 1.6V @ 8µA
• Gate Charge (qg) @ Vgs: 2.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.6
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
0.6
0.5
0.4
0.3
0.2
0.1
0
GS
-1
-2
-3
-4
A
10
0
); V
)
limited by on-state
resistance
0
p
DS
=3 V; T
40
10
j
=25 °C
1
T
V
A
DS
80
[°C]
[V]
10
2
120
100 µs
10 ms
DC
10 µs
1 ms
160
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.025
0.015
0.005
0.02
0.01
=f(t
10
10
10
A
0
3
2
1
); V
10
p
0
)
0.01
-4
0.02
0.05
0.5
0.2
GS
0.1
≥10 V
10
p
single pulse
/T
-3
40
10
-2
T
t
A
10
p
80
[°C]
[s]
-1
10
0
120
10
BSS126
1
2009-08-18
160
10
2