BSS126 H6327 Infineon Technologies, BSS126 H6327 Datasheet - Page 7

• Manufacturer Part Number: BSS126 H6327
• Description: MOSFET N-CH 600V 21MA SOT23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS126 H6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 1.6V @ 8µA
• Gate Charge (qg) @ Vgs: 2.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.6
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
I
F
D
=f(V
=f(V
0.001
0.01
700
660
620
580
540
500
0.1
SD
GS
-60
)
0
); V
DS
j
=3 V; T
-20
0.5
150 °C
20
j
=25 °C
1
V
150 °C, 98%
T
SD
25 °C
j
60
[°C]
25 °C, 98%
[V]
1.5
100
2
140
180
2.5
page 7
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-1
-2
-3
-4
6
5
4
3
2
1
0
0
gate
); I
DD
D
=0.1 A pulsed
0.4
Q
0.2 VDS(max)
gate
0.8
[nC]
0.5 VDS(max)
1.2
0.8 VDS(max)
BSS126
2009-08-18
1.6