BSS126 H6906 Infineon Technologies, BSS126 H6906 Datasheet - Page 6

• Manufacturer Part Number: BSS126 H6906
• Description: MOSFET N-KANAL SMALL SIGNAL MOS
• Manufacturer: Infineon Technologies

Specifications of BSS126 H6906

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.021 A
• Resistance Drain-source Rds (on): 700 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT23-3
• Fall Time: 115 ns
• Forward Transconductance Gfs (max / Min): 0.017 S
• Gate Charge Qg: 1.4 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.5 W
• Rise Time: 9.7 ns
• Typical Turn-off Delay Time: 14 ns
• Part # Aliases: BSS126H6906XT BSS126H6906XTSA1 SP000705716

Rev. 2.1
Rev. 2.1
9 Drain-source on-state resistance
R
11 Threshold voltage bands
I
D
DS(on)
=f(V
0.001
1600
1600
1400
1400
1200
1200
1000
1000
0.01
800
800
600
600
400
400
200
200
0.1
=f(T
GS
0
0
-2.5
-60
-60
); V
j
); I
DS
N
D
=3 V; T
-20
-20
= 0.016mA; V
M
L
20
20
j
-2
=25 °C
98 %
98 %
V
K
GS
T
T
j
j
[V]
60
60
[°C]
[°C]
GS
J
typ
typ
=0 V
-1.5
100
100
140
140
8 µA
180
180
-1
page 6
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typ. capacitances
C =f(V
GS(th)
-1.5
-1.5
-2.5
-2.5
-3.5
-3.5
100
0.1
=f(T
10
-1
-1
-2
-2
-3
-3
DS
1
-60
-60
); V
0
j
); V
D
GS
=-3 V; f =1 MHz
DS
-20
-20
=3 V; I
20
20
10
D
= 8 µA
V
T
T
DS
j
j
60
60
[°C]
[°C]
[V]
98 %
98 %
typ
typ
2 %
2 %
100
100
20
140
140
2012-03-14
2012-03-14
BSS126
Ciss
Crss
Coss
180
180
30