IPB80P03P4L-04 Infineon Technologies, IPB80P03P4L-04 Datasheet
IPB80P03P4L-04
Specifications of IPB80P03P4L-04
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IPB80P03P4L-04 Summary of contents
Page 1
... PG-TO263-3-2 Marking 4P03L04 4P03L04 4P03L04 Symbol Conditions T =25° =-10V GS T =100° =-10V =25°C D,pulse =-40A =25 °C tot stg - - page 1 IPB80P03P4L-04 -30 V 4.1 m -80 A PG-TO262-3-1 PG-TO220-3-1 Value Unit -80 A -80 -320 410 mJ -80 A +5/-16 V 137 W -55 ... +175 °C 55/175/56 2008-07-29 ...
Page 2
... DSS T =25° =-24V =125° =-16V, V GSS =-4.5V, I =-80A DS(on =-4.5V, I =-80A SMD version V =-10V, I =-80A =-10V, I =-80A SMD version page 2 IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 Values min. typ. max 1 -30 - -1.0 -1.5 -2.0 =0V, - -0.05 -1 =0V, - -20 -200 = -100 - 5.0 - 4.7 6.7 - 3.7 4 ...
Page 3
... C I S,pulse V =0V, I =-80A =25° =-15V, I =-80A /dt =-100A/µ 1.1K/W the chip is able to carry -146A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 Values min. typ. max. - 8670 11300 pF - 2350 3050 - 65 130 - 140 - - ...
Page 4
... DS Rev. 1.0 2 Drain current I = f(T D 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 10 100 µ 100 [V] page 4 IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L- ≤ -6V; SMD 100 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 150 200 - 2008-07-29 ...
Page 5
... GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 4. 3. [V] 8 Typ. drain-source on-state resistance R = f(T DS(on °C 175 ° - [V] page 5 IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L- °C; SMD - 160 240 - -10 V; SMD - 100 T [°C] j -4.5V -5V -10V 320 140 180 2008-07-29 ...
Page 6
... SD Rev. 1.0 10 Typ. capacitances 2530µ 100 140 180 12 Avalanche characteristics I = f(t AS parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-07-29 ...
Page 7
... A 200 [° Typ. gate charge -80 A pulsed GS gate D parameter gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms -6V -24V 80 100 120 140 [nC] page 7 IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L- -60 - 100 T [° 140 180 gate gate 2008-07-29 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI80P03P4L-04, IPP80P03P4L-04 page 8 IPB80P03P4L-04 2008-07-29 ...
Page 9
... Revision History Version Rev. 1.0 IPI80P03P4L-04, IPP80P03P4L-04 Date page 9 IPB80P03P4L-04 Changes 2008-07-29 ...