IPB80P03P4L-04 Infineon Technologies, IPB80P03P4L-04 Datasheet - Page 5

• Manufacturer Part Number: IPB80P03P4L-04
• Description: MOSFET P-CH 30V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80P03P4L-04

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 253µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 11300pF @ 25V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
320
240
160
320
240
160
80
80
0
0
DS
GS
1
0
); T
); V
GS
j
j
DS
= 25 °C; SMD
10V
1
= -6V
2
5V
2
3
-V
-V
GS
DS
-55 °C
3
[V]
[V]
4
4
25 °C
175 °C
5
5
4V
3.5V
4.5V
3V
page 5
6
6
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
18
15
12
9
6
3
0
6
5
4
3
2
= (I
= f(T
-60
0
D
); T
j
); I
GS
IPI80P03P4L-04, IPP80P03P4L-04
-20
j
D
= 25 °C; SMD
= -80 A; V
80
20
T
-I
GS
160
j
D
60
[°C]
[A]
= -10 V; SMD
-4V
IPB80P03P4L-04
100
240
140
2008-07-29
-10V
-4.5V
-5V
320
180